Plasma-Enhanced Chemical Vapor Deposition (PECVD)

Responsibility:

PECVD


 

PECVD2

Plasma Enhanced Chemical Vapor Deposition

Oxford Instruments PECVD 80+

  • Plasma assisted deposition of dielectric layers
  • Sample size up to 6”
  • Base pressure 2 mTorr
  • RF 13.56 MHz and LF 40 kHz generators for stress-free layers
  • 2.5% SiH4 in N2, NH3, N2O gas
  • CF4, O2 for reactor cleaning
  • SiOx, SiOxNy and SiNx

Oxford Instruments PECVD Plasma Pro 80 (PECVD2)

  • Plasma assisted deposition of dielectric layers
  • Sample size up to 6”
  • RF 13.56 MHz and LF 40 kHz
  • 2.5% SiH4, in N2, NH3, N2O ,CF4, N2
  • SiOx, SiOxNy and SiNx
  • Endpointdetection for Plasma Cleaning
     
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