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ETH Zurich - FIRST - Equipment & Infrastructure - FIRST-Equipment - PECVD 

Plasma Enhanced Chemical Vapor Deposition

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News:

22.05.2012 FIRST User Introduction Day

Lecture Announcement:

Semiconductor Materials: Characterization, Processes & Devices
Spring Semester Tuesdays, 12:45 p.m., HCI J 8

PECVD

Oxford Instruments PECVD 80+

• Plasma assisted deposition of dielectric layers
• Sample size up to 6”
• Base pressure 2 mTorr
• RF 13.56 MHz and LF 40 kHz generators for stress-free layers
• 2.5% SiH₄ in N₂, NH₃, N₂O gas
• CF₄, O₂ for reactor cleaning
• SiO_x, SiO_xN_y and SiN_x

Room: HCI B129.1 Deposition
Tel: -34657

Responsible persons for user training and technical support:
(1) Christian Zaugg
(2) Petra Burkard

 

PECVD Manual, PDF, NETHZ-Login required

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