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Molecular Beam Epitaxy (MBE)
Other scientific service centers at ETH:
- Electron Microscopy Center (EMEZ)
- Light Microscopy Centre (LMC)
- CLA-MEMS-Cleanroom
- Binnig and Rohrer Nanotechnology Center, IBM & ETHZ
News:
22.05.2012 FIRST User Introduction Day
Lecture Announcement:
Semiconductor Materials: Characterization, Processes & Devices
Spring Semester Tuesdays, 12:45 p.m., HCI J 8
Room: HCI B125.8 MBE
Tel: -34613
VEECO/Applied EPI GEN III MBE
- Epitaxial growth of III-V compounds on GaAs, InP, GaSb substrates
- Two growth chambers, one analysis chamber
- Base pressure ca. 1x10-10 mbar
- Sources: As, P, Sb, Ga, In, Al, N2
Doping: Be, Si, CBr4 - Process Control: DRS, BandiT, RHEED, EPI-R
- Preparation chamber with H2 cleaning, Cell baking ports and QMS
Responsible persons for user training and technical support:
(1) Silke Schön
(2) Matthias Golling
VG V80H MBE system
- Epitaxial growth of unipolar III-V compounds on InP and GaAs substrates
- Growth chamber equipped with 10 cell ports
- Sources: As, Ga, Al, In, Si (dopant)
- Process control: RHEED, optical pyrometer
Responsible persons for user training and technical support:
(1) Mattias Beck
(2) Valeria Liverini
Reservation:
Reservations can be made in the weekly MBE meeting;
Wednesday 9:00-10:00 am, room HCI C127.3
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