Inductively Coupled Plasma Etching

Oxford Instruments ICP 180

• Plasma assisted etching of III-V semiconductor materials
• Samples form 6x6mm on 4” Si-carrier up to 4“ wafer
• Base pressure 6x10^-7 Torr
• Temperature controlled Stage –150°C to 400°C
• CH₄, H₂, Cl₂, CF₄, SF₆, O₂, Ar, and N₂
• RF 13.56 MHz 500W source
• ICP 13.56 MHz 3 kW source
• Load lock with automatic transfer

The ICP system is mainly dedicated for anisotropic etching of InP, GaAs and its quaternary materials. It is equipped with the neccessary gas sources to run the common standard reciepes for these compound semiconductors. The coil around the chamber allows to couple inductively energy to the plasma, allowing a more dense plasma.

Projects

• Etching of 2D-Photonic crystals in InP/InGaAsP slab waveguides.
• Patterning of alumina-oxide deposited with atomic layer deposition for the creation of NEMS structures and devices
• GaAs-etching
• Etching of GaN bulk single crystals as a preparation step for homoepitaxy substrates.

Reservation:
ICP

Room: HCI B129.1 Deposition
Tel: -34657

Responsible persons for user training and technical support:
(1) Ralf Flückiger
(2) Angel Pallin

 

Short Workinstruction, PDF, NETHZ-Login required

Workinstruction, PDF, NETHZ-Login required