E-Beam Lithography

FIRST operates two electron beam lithography systems from Raith GmbH. Both systems operate at beam energies up to 30 keV and can handle any shaped substrates up to 6” in diameter.

Raith 150

• Schottky thermal-field emission filament, resolution: 2 nm @ 20 kV
• Acceleration voltage: 200 V – 30 kV
• Beam current: 4 pA – 350 pA
• Working distance: 2 – 12 mm
• Writefield: 1 μm – 1 mm
• 16 bits / 10 MHz pattern generator
• Samples: 1 mm – 6”
• Interferometer stage, 2 nm positioning accuracy
• Overlay and stitching accuracy: better than 20nm
• High degree of automation for automatic pattern placement and long exposures

Room: HCI B129.8 Nanolithography
Tel: -34614

Responsible persons for user training and technical support:
(1) Dominik Bischoff
(2) Andres Vargas Lugo Cantu

Raith 150TWO

• Schottky TFE electron beam source
• Dose stability for any time period
• In-Lens SE detector for shadow free metrology
• Laser height sensor for automatic focus setting
• Digital 20 MHz Pattern Generator
• Laser interferometer with 1 nm resolution
• Small samples up to 8" wafers compatible
• Beam size < 2 nm @ EHT > 20kV
• Beam position stability ≤ 200 nm in 8 hours
• Beam current stability ≤ 0.5% in 8 hours
• Minimum feature size < 10 nm
• 200-μm field stitching < 40 nm
• 200-μm field overlay < 40 nm
• High degree of automation for automatic pattern placement and long exposures
• Data preparation scripts:
o Files4Raith data preprocessing
o Dose generator for multi layer profiles
o Reference line-scan generator
• Available beam currents:
@10kV @30kV
7.5μm: ~15pA
10μm: ~29pA
20μm: ~110pA
30μm: ~190pA
60μm: ~0.94nA
120μm: ~3.77nA
7.5μm: ~25pA
10μm: ~50pA
20μm: ~180pA
30μm: ~310pA
60μm: ~1.58nA
120μm: ~6.33nA

Room: HCI B129.7 SEM
Tel: -34626

Responsible persons for user training and technical support:
(1) Andreas Alt
(2) Sandro Bellini

EBL Training Requirements (ETHZ login required)

Projects

Application notes from Raith GmbH and FIRST users